10
RF Device Data
Freescale Semiconductor
MRF6S27085HR3 MRF6S27085HSR3
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
?
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
?
EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
3
Dec. 2008
?
Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification
number, PCN13232, p. 1, 2
?
Removed Lower Thermal Resistance and Low Gold Plating bullets from Features section as functionality
is standard, p. 1
?
Removed Total Device Dissipation from Max Ratings table as data was redundant (information already
provided in Thermal Characteristics table), p. 1
?
Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related
?Continuous use at maximum temperature will affect MTTF? footnote added, p. 1
?
Corrected VDS
to V
DD
in the RF test condition voltage callout for V
GS(Q), and added ?Measured in
Functional Test?, On Characteristics table, p. 2
?
Removed Forward Transconductance from On Characteristics table as it no longer provided usable
information, p. 2
?
Changed minimum drain efficiency specification from 22% to 21% to match production test limits, Table 4,
Functional Tests, p. 2
?
Updated Part Numbers in Table 5, Component Designations and Values, to RoHS compliant part numbers,
p. 3
?
Removed lower voltage tests from Fig. 11, Power Gain versus Output Power, due to fixed tuned fixture
limitations, p. 6
?
Replaced Fig. 12, MTTF versus Junction Temperature, with updated graph. Removed Amps2
and listed
operating characteristics and location of MTTF calculator for device, p. 7
?
Added Product Documentation and Revision History, p. 10
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